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? IRG8P15N120KDPBF irg8p15n120kd-epbf base part number package type standard pack orderable part number form quantity IRG8P15N120KDPBF to -247ac tube 25 IRG8P15N120KDPBF irg8p15n120kd- epbf to-247ad tube 25 irg8p15n 120kd-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector curr ent (silicon limited) 30 i c @ t c = 100c continuous collector current 15 i cm pulse collector current (see fig. 2) 30 i lm clamped inductive load current (see fig. 3) ? 40 i f @ t c = 25c diode continuous forward current 20 i f @ t c = 100c diode continuous forward current 11 i fm diode maximum forward current ? 40 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 125 w p d @ t c = 100c maximum power dissipation 50 t j operating junction and -40 to +150 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) a thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 1.0 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 1.7 v ces = 1200v i c = 15a, t c =100c t sc ?? 10s, t j(max) = 150c v ce(on) typ. = 1.7v @ i c = 10a applications ? industrial motor drive ? ups ? solar inverters ? welding g c e gate collector emitter g e c ? g c e insulated gate bipolar transistor with ultrafast soft recovery diode ? IRG8P15N120KDPBF ? to \ 247ac ? e g n-channel c irg8p15n120kd \ epbf ? to \ 247ad ? 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 features benchmark low v ce(on) high efficiency in a motor drive applications 10 s short circuit soa increases margin for short circuit protection scheme positive v ce(on) temperature coefficient excellent current sharing in parallel operation square rbsoa and high i lm- rating rugged transient performance lead-free, rohs compliant environmentally friendly benefits ?
2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.1 ? v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.0 v i c = 10a, v ge = 15v, t j = 25c ? 2.0 ? i c = 10a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 5.0 ? 6.5 v v ce = v ge , i c = 400a ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -16 ? mv/c v ce = v ge , i c = 400a (25c-150c) gfe forward transconductance ? 5.7 ? s v ce = 50v, i c = 10a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 30 a v ge = 0v, v ce = 1200v ? 1.0 ? v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v v f ? ? 2.1 2.7 v i f = 10a ? 2.4 ? i f = 10a, t j = 150c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 65 98 nc i c = 10a q ge gate-to-emitter charge (turn-on) ? 6.0 9.0 v ge = 15v q gc gate-to-collector charge (turn-on) ? 40 60 v cc = 600v e on turn-on switching loss ? 0.6 ? mj ? i c = 10a, v cc = 600v, v ge =15v r g = 10 ? , t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 0.6 ? e total total switching loss ? 1.2 ? t d(on) turn-on delay time ? 15 ? ns ? t r rise time ? 20 ? t d(off) turn-off delay time ? 170 ? t f fall time ? 200 ? e on turn-on switching loss ? 0.9 ? mj ? i c = 10a, v cc = 600v, v ge =15v r g = 10 ? , t j = 150c energy losses include tail & diode reverse recovery ? ? e off turn-off switching loss ? 1.1 ? e total total switching loss ? 2.0 ? t d(on) turn-on delay time ? 15 ? ns t r rise time ? 20 ? t d(off) turn-off delay time ? 250 ? t f fall time ? 330 ? c ies input capacitance ? 1290 ? v ge = 0v c oes output capacitance ? 60 ? pf v cc = 30v c res reverse transfer capacitance ? 30 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 40a full square v cc = 960v, vp 1200v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 10 ? ? ? ? ? s ? t j = 150c,v cc = 600v, vp 1200v v ge = +15v to 0v erec reverse recovery energy of the diode ? 0.8 ? mj t j = 150c t rr diode reverse recovery time ? 60 ? ns v cc = 600v, i f = 10a i rr peak reverse recovery current ? 26 ? a v ge = 15v, rg = 10 ? diode forward voltage drop ? ma ? notes: ? v cc = 80% (v ces ), v ge = 20v. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement .
3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 50w i square wave: v cc diode as specified fig. 5 - typ. igbt saturation voltage v ge = 15v; tp = 20s 10 100 1000 10000 v ce (v) 1 10 100 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0 2 4 6 8 10 v ce (v) 0.1 1.0 10 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 4 - typ. igbt output characteristics t j = 25c; tp = 20s fig. 2 - forward soa t c = 25c; t j 150c; v ge = 15v 0 2 4 6 8 10 v ce (v) 0.1 1 10 100 i c e ( a ) tc = -40c tc = 25c tc = 150c fig. 3 - reverse bias soa t j = 150c; v ge = 20v
4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf 0204060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 46810121416 v ge (v) 0.1 1 10 100 i c e ( a ) t j = -40c t j = 25c t j = 150c 2 4 6 8 10 12 14 16 18 20 i c (a) 0.0 0.5 1.0 1.5 2.0 2.5 e n e r g y ( m j ) e off @ tj = 150c e on @ tj = 150c e rr @ tj = 150c e off @ tj = 25c e on @ tj = 25c e rr @ tj = 25c fig. 6 - typ. transfer characteristics v ce = 50v; tp = 20s 0 4 8 12 16 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td on t f td off fig. 7 - typical gate charge vs. v ge i ce = 10a 8 162432404856 rg ( ? ) 0.0 0.5 1.0 1.5 2.0 2.5 e n e r g y ( m j ) e on @ tj = 150c e off @ tj = 150c e rr @ tj = 150c eon @ tj = 25c eoff @ tj = 25c err @ tj = 25 fig. 8 - typ. energy loss vs. i c v ce = 600v, r g = 10 ? ; v ge = 15v fig. 10 - typ. energy loss vs. r g v ce = 600v, i ce = 10a; v ge = 15v 8 16 24 32 40 48 56 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td on t f td off fig. 11 - typ. switching time vs. r g t j = 150c; v ce = 600v, i ce = 10a; v ge = 15v fig. 9 - typ. switching time vs. i c t j = 150c; v ce = 600v, r g = 10 ? ; v ge = 15v
5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf fig. 14 - typ. diode forward voltage drop characteristics fig. 12 - typ. i rr vs. di/dt fig. 13 - typ. diode e rr vs. i f t j = 150c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0.1 1 10 100 i f ( a ) -40c 25c 150c 600 700 800 900 1000 1100 1200 1300 di f /dt (a/s) 16 18 20 22 24 26 28 30 i r r ( a ) v cc = 600v tj = 150c v ge = 15v i f = 10a r g = ???? r g = ??? r g = 10 ? r g = ??? 4 8 12 16 20 i f (a) 500 600 700 800 900 1000 1100 1200 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 10 ??
6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf fig. 16 - maximum transient thermal impedance, junction-to-case (diode) fig. 15 - maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.04595 0.000029 0.57951 0.000372 0.67140 0.004176 0.40462 0.047311 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.05998 0.000058 0.30139 0.000138 0.38387 0.002914 0.25341 0.020999 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit (board stray inductance 180nh) fig.c.t.5 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v g force c sense 100k dut 0.0075f d1 22k e force c force e sense
8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -10 0 10 20 30 40 50 60 70 80 -100 0 100 200 300 400 500 600 700 800 -10.00 0.00 10.00 20.00 ice (a) vce (v) time (us) v ce i ce
9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 4, 2014 ? IRG8P15N120KDPBF/irg8p15n120kd-epbf ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? industrial ? (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a to-247ad n/a rohs compliant yes qualification level ? ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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